## Question

###### FQRMULA SHEET when Rin tends infinity. V & 0 & Semiconductor Diode Electrica) conductivity material [Carrier density per unit volume (n) electronic charge (Q mobility (p)] (Electronic chargc: 10-[8 In an intrinsic semiconductor: 0 = electron density and p = hole density Mass balance relation: In doped material, any given temperature: (Majority carrier density minority carrier density) Electrical resistance (in ohm) of material (at any given temperature) (Resistivity Length)(Area of cross

FQRMULA SHEET when Rin tends infinity. V & 0 & Semiconductor Diode Electrica) conductivity material [Carrier density per unit volume (n) electronic charge (Q mobility (p)] (Electronic chargc: 10-[8 In an intrinsic semiconductor: 0 = electron density and p = hole density Mass balance relation: In doped material, any given temperature: (Majority carrier density minority carrier density) Electrical resistance (in ohm) of material (at any given temperature) (Resistivity Length)(Area of cross-section) In a PN junction: I[exp {YynVt} IJ: n ~ for Ge and 2 for Si Vt of diode (Tin kelvin' [ [600) 26 mV at 300" kelvin Fonen Cumemt 0.7 tor $ Reverg & vullage Fortan RevEiBA Bamnalar Cument (LA [exp{V nVt} Static resistamce dlude: &Ine O-puini Vc Ip lor Ge and Dean $ resstance Cne diddet AVal; 0.026 vele Rectifier_circuit Ripple factor (Full-wave rectifier), r = LZfCRL Waveform RMS value Peak-value/(2)" Average Valuc Peak-value/2 Peak valuelT